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ST36N10D Datasheet, STANSON

ST36N10D Datasheet, STANSON

ST36N10D

datasheet Download (Size : 629.08KB)

ST36N10D Datasheet

ST36N10D mosfet equivalent, n-channel enhancement mode mosfet.

ST36N10D

datasheet Download (Size : 629.08KB)

ST36N10D Datasheet

Application

PIN CONFIGURATION TO-252 FEATURE l 100V/20.0A, RDS(ON) = 40mΩ (Typ.) @VGS = 10V l 100V/20.0A, RDS(ON) = 42mΩ @VGS = 4.

Description

STN36N10D is used trench technology to provide excellent RDS(on) and gate charge. Those devices are suitable for use as load switch or in PWM applications. PIN CONFIGURATION TO-252 FEATURE l 100V/20.0A, RDS(ON) = 40mΩ (Typ.) @VGS = 10V l 100V/20.0A.

Image gallery

ST36N10D Page 1 ST36N10D Page 2 ST36N10D Page 3

TAGS

ST36N10D
N-Channel
Enhancement
Mode
MOSFET
STANSON

Manufacturer


STANSON

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