ST36N06 Datasheet | STANSON

DESCRIPTION ST36N06 is used trench technology to provide excellent RDS(on) and gate charge. Those devices are suitable for use as load switch or in PWM applications. PIN CONFIGURATION TO220-3L FEATURE 60V/20.0A, RDS(ON) = 30mΩ (Typ.) @VGS = 10V 60V/20.0A, RDS(ON) = 45mΩ @VGS = 4.5V Super high density cell design for extremely low RDS(ON) Exceptional on-resistance and maximum DC current capability TO-220 package design STANSON TECHNOLOGY 120 Bentley Square, Mountain View, Ca 94040 USA .stansontech. Copyright © 2009, Stanson Corp. ST36N06 2009. V1 N Channel Enhancement Mode MOSFET 36.0A ABSOULTE MAXIMUM RATINGS (Ta = 25℃ Unless otherwise noted ) Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (TJ=150℃) Pulsed Drain Current Avalanche Current Symbol VDSS TA=25℃ TA=70℃ VGSS ID Typical ±20 36.0 26.0 60 Unit V V A A A Power Dissipation TA=25℃ Operation Junction Temperature Storgae Temperature Range Thermal Resistance-Junction to Ambient TJ TSTG RθJA 175 -55/175 ℃ ℃ ℃/W STANSON TECHNOLOGY 120 Bentley Square, Mountain View, Ca 94040 USA .stansontech. Copyright © 2009, Stanson Corp. ST36N06 2009. V1 N Channel Enhancement Mode...