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STN8205A Datasheet - STANSON

STN8205A - Dual N-Channel Enhancement Mode MOSFET

STN8205A is the dual N-Channel enhancement mode power field effect transistor which is produced using high cell density, DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. These devices are particularly suited for low voltage application, such

STN8205A-StansonTechnology.pdf