STN8205A Description
STN8205A is the dual N-Channel enhancement mode power field effect transistor which is produced using high cell density, DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. These devices are particularly suited for low voltage application, such as notebook puter power management and other battery powered circuits, where high-side switching is required.
STN8205A Key Features
- 20V/5.0A, RDS(ON) = 21m-ohm (Typ.) @VGS =4.5V
- 20V/3.0A, RDS(ON) =27m-ohm @VGS =2.5V
- Super high density cell design for extremely low RDS(ON)
- Exceptional low on-resistance and maximum DC current capability
- TSSOP-8 package design D1 S1 S1 G1 Y: Year Code A: Date Code B: Process Code STANSON TECHNOLOGY 120 Bentley