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STP4189D Datasheet Preview

STP4189D Datasheet

P-Channel Enhancement Mode MOSFET

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STP4189D
P Channel Enhancement Mode MOSFET
-12.0A
DESCRIPTION
STP4189D is the P-Channel logic enhancement mode power field effect transistor
which is produced using high cell density, DMOS trench technology. The STP413D has
been designed specially to improve the overall efficiency of DC/DC converters using
either synchronous or conventional switching PWM controllers. It has been optimized
for low gate charge, low RDS(ON) and fast switching speed.
PIN CONFIGURATION (D-PAK)
FEATURE
TO-252
TO-251
-40V/-12.0A, RDS(ON) = 18mΩ (Typ.)
@VGS = -10V
-40V/-8.0A, RDS(ON) = 24mΩ
@VGS =-4.5V
Super high density cell design for
extremely low RDS(ON)
Exceptional on-resistance and
maximum DC current capability
TO-252,TO-251 package design
PART MARKING
Y: Year Code
A: Week Date
Q: Process Code
STANSON TECHNOLOGY
120 Bentley Square, Mountain View, Ca 94040 USA
www.stansontech.com
Copyright © 2009, Stanson Corp.
STP4189D 2009. V1




STANSON

STP4189D Datasheet Preview

STP4189D Datasheet

P-Channel Enhancement Mode MOSFET

No Preview Available !

STP4189D
P Channel Enhancement Mode MOSFET
-12.0A
ABSOULTE MAXIMUM RATINGS (Ta = 25Unless otherwise noted )
Parameter
Symbol
Drain-Source Voltage
VDSS
Gate-Source Voltage
VGSS
Pulsed Drain Current
IDM
Continuous Source Current (Diode Conduction)
Power Dissipation
TA=25
TA=70
Operation Junction Temperature
IS
PD
TJ
Storgae Temperature Range
TSTG
Thermal Resistance-Junction to Ambient
RθJA
Typical
-40
±20
-50
-20
52.5
31
150
-55/150
50
Unit
V
V
A
A
W
/W
STANSON TECHNOLOGY
120 Bentley Square, Mountain View, Ca 94040 USA
www.stansontech.com
Copyright © 2009, Stanson Corp.
STP4189D 2009. V1


Part Number STP4189D
Description P-Channel Enhancement Mode MOSFET
Maker STANSON
Total Page 9 Pages
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