GD1400HFX170P2S Datasheet - STARPOWER

GD1400HFX170P2S IGBT

GD1400HFX170P2S Features

* Low VCE(sat) Trench IGBT technology

* 10μs short circuit capability

* VCE(sat) with positive temperature coefficient

* Maximum junction temperature 175oC

* Enlarged Diode for regenerative operation

* Isolated copper baseplate using DBC technology

* High power and therma

Datasheet Details

GD1400HFX170P2S

STARPOWER

445.44 KB

Igbt.

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GD1400HFX170P2S IGBT STARPOWER

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