GD650HTA75P8HFT Datasheet - STARPOWER

GD650HTA75P8HFT IGBT

GD650HTA75P8HFT Features

* Low VCE(sat) Trench IGBT technology

* Low switching losses

* 6μs short circuit capability

* VCE(sat) with positive temperature coefficient

* Maximum junction temperature 175oC

* Low inductance case

* Fast & soft reverse recovery anti-parallel FWD

* Isolated copper p

Datasheet Details

GD650HTA75P8HFT

STARPOWER

548.36 KB

Igbt.

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GD650HTA75P8HFT IGBT STARPOWER

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