GD660HTA75P7H Datasheet - STARPOWER

GD660HTA75P7H IGBT

GD660HTA75P7H Features

* Low VCE(sat) Trench IGBT technology

* Low switching losses

* 6μs short circuit capability

* VCE(sat) with positive temperature coefficient

* Maximum junction temperature 175oC

* Low inductance case

* Fast & soft reverse recovery anti-parallel FWD

* Isolated copper p

Datasheet Details

GD660HTA75P7H

STARPOWER

701.83 KB

Igbt.

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GD660HTA75P7H IGBT STARPOWER

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