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110N10F7 - N-Channel MOSFET

General Description

This N-channel Power MOSFET utilizes STripFET F7 technology with an enhanced trench gate structure that results in very low on-state resistance, while also reducing internal capacitance and gate charge for faster and more efficient switching.

Key Features

  • PowerFLAT 5x6 Order code VDS RDS(on) max. STL110N10F7 100 V 6 mΩ.
  • Among the lowest RDS(on) on the market.
  • Excellent FoM (figure of merit).
  • Low Crss/Ciss ratio for EMI immunity.
  • High avalanche ruggedness ID 107 A PTOT 136 W D(5, 6, 7, 8) 8 76 5.

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Full PDF Text Transcription (Reference)

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STL110N10F7 N-channel 100 V, 5 mΩ typ., 107 A, STripFET F7 Power MOSFET in a PowerFLAT 5x6 package Features PowerFLAT 5x6 Order code VDS RDS(on) max. STL110N10F7 100 V 6 mΩ • Among the lowest RDS(on) on the market • Excellent FoM (figure of merit) • Low Crss/Ciss ratio for EMI immunity • High avalanche ruggedness ID 107 A PTOT 136 W D(5, 6, 7, 8) 8 76 5 Applications • Switching applications G(4) Description S(1, 2, 3) 12 34 Top View AM15540v2 This N-channel Power MOSFET utilizes STripFET F7 technology with an enhanced trench gate structure that results in very low on-state resistance, while also reducing internal capacitance and gate charge for faster and more efficient switching.