| Part Number | 110N10F7 Datasheet |
|---|---|
| Manufacturer | VBsemi |
| Overview |
110N10F7-VB
110N10F7-VB Datasheet
N-Channel 100 V (D-S) MOSFET
PRODUCT SUMMARY
VDS (V) RDS(on) () at VGS = 10 V ID (A) a Configuration
TO-220AB
100 0.005 120 Single
FEATURES • Thu.
* ThunderFET® power MOSFET * Maximum 175 °C junction temperature * 100 % Rg and UIS tested * Material categorization: for definitions of compliance please see D G S D G S N-Channel MOSFET ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted) PARAMETER SYMBOL Drain-Source Voltage VDS. |
110N10F7 Datasheet and Specifications PDF
The 110N10F7 is a N-Channel MOSFET.
| Part Number | 110N10F7 Datasheet |
|---|---|
| Description | N-Channel MOSFET |
| Manufacturer | STMicroelectronics |
| Overview |
S(1, 2, 3)
12 34 Top View
AM15540v2
This N-channel Power MOSFET utilizes STripFET F7 technology with an enhanced trench gate structure that results in very low on-state resistance, while also reduc.
PowerFLAT 5x6
Order code
VDS
RDS(on) max.
STL110N10F7
100 V
6 mΩ
* Among the lowest RDS(on) on the market * Excellent FoM (figure of merit) * Low Crss/Ciss ratio for EMI immunity * High avalanche ruggedness ID 107 A PTOT 136 W D(5, 6, 7, 8) 8 76 5 Applications * Switching applications . |