11N3L Description
This device is an N-channel Power MOSFET developed using the STripFET™ H6 technology with a new trench gate structure. The resulting Power MOSFET exhibits very low RDS(on) in all packages. S(1, 2, 3) Order code STL11N3LLH6 1234 AM15810v1 Table.
11N3L Key Features
- Very low on-resistance
- Very low gate charge
- High avalanche ruggedness
- Low gate drive power loss