11N60M6 Datasheet | STMicroelectronics

STD11N60M6 Datasheet N-channel 600 V, 500 mΩ typ., 8 A, MDmesh M6 Power MOSFET in a DPAK package TAB 23 1 DPAK D(2, TAB) G(1) S(3) AM01476v1_tab Features Order code VDS RDS(on) max. ID STD11N60M6 600 V 520 mΩ 8A - Reduced switching losses - Lower RDS(on) per area vs previous generation - Low gate input resistance - 100% avalanche tested - Zener-protected PTOT 90 W Applications - Switching applications - LLC converters - Boost PFC converters Description The new MDmesh M6 technology incorporates the most recent advancements to the well-known and consolidated MDmesh family of SJ MOSFETs. STMicroelectronics builds on the previous generation of MDmesh devices through its new M6 technology, which bines excellent RDS(on) per area improvement with one of the most effective switching behaviors available, as well as a user-friendly experience for maximum end-application efficiency....