• Part: 11N60C3
  • Description: Power Transistor
  • Manufacturer: Infineon
  • Size: 689.40 KB
Download 11N60C3 Datasheet PDF
11N60C3 page 2
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11N60C3 Datasheet Text

SPP11N60C3 SPI11N60C3, SPA11N60C3 Cool MOS™ Power Transistor Feature - New revolutionary high voltage technology - Ultra low gate charge - Periodic avalanche rated - Extreme dv/dt rated - High peak current capability - Improved transconductance P-TO220-3-31 1 2 3 VDS @ Tjmax RDS(on) ID PG-TO220-3-31 PG-TO262-3 650 0.38 11 PG-TO220 V Ω A - PG-TO-220-3-31: Fully isolated package (2500 VAC; 1 minute) Type SPP11N60C3 SPI11N60C3 SPA11N60C3 Package PG-TO220-3 PG-TO262-3 Ordering Code Q67040-S4395 Q67042-S4403 Marking 11N60C3 11N60C3 11N60C3 PG-TO220-3-31 SP000216312 Maximum Ratings Parameter .. Symbol SPP_I ID 11 7 ID puls EAS EAR IAR VGS VGS Ptot Tj , Tstg dv/dt Page 1 Value SPA Unit A 11 1) 71) 33 340 0.6 11 ±20 ±30 33 W °C V/ns A V A mJ Continuous drain current TC = 25 °C TC = 100 °C Pulsed drain current, tp limited by Tjmax Avalanche energy, single pulse...