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11N60C2 - Power Transistor

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Final data SPP11N60C2, SPB11N60C2 SPA11N60C2 Cool MOS™ Power Transistor Feature • New revolutionary high voltage technology • Ultra low gate charge • Periodic avalanche rated • Extreme dv/dt rated • Ultra low effective capacitances Product Summary VDS @ Tjmax 650 V RDS(on) 0.38 Ω ID 11 A P-TO220-3-31 P-TO263-3-2 P-TO220-3-1 Type SPP11N60C2 SPB11N60C2 SPA11N60C2 3 12 P-TO220-3-31 Package Ordering Code P-TO220-3-1 Q67040-S4295 P-TO263-3-2 Q67040-S4298 P-TO220-3-31 Q67040-S4332 Marking 11N60C2 11N60C2 11N60C2 Maximum Ratings Parameter Continuous drain current TC = 25 °C TC = 100 °C Pulsed drain current, tp limited by Tjmax Avalanche energy, single pulse ID=5.