11N60C2 Datasheet Text
Final data
SPP11N60C2, SPB11N60C2 SPA11N60C2
Cool MOS™ Power Transistor
Feature
- New revolutionary high voltage technology
- Ultra low gate charge
- Periodic avalanche rated
- Extreme dv/dt rated
- Ultra low effective capacitances
Product Summary
VDS @ Tjmax 650 V
RDS(on)
0.38 Ω
ID
11 A
P-TO220-3-31 P-TO263-3-2 P-TO220-3-1
Type SPP11N60C2 SPB11N60C2 SPA11N60C2
3 12 P-TO220-3-31
Package
Ordering Code
P-TO220-3-1 Q67040-S4295
P-TO263-3-2 Q67040-S4298
P-TO220-3-31 Q67040-S4332
Marking 11N60C2 11N60C2 11N60C2
Maximum Ratings Parameter
Continuous drain current
TC = 25 °C TC = 100 °C
Pulsed drain current, tp limited by Tjmax Avalanche energy, single pulse
ID=5.5A, VDD=50V
Avalanche energy, repetitive tAR limited by Tjmax2)...