12N170K5 Datasheet | STMicroelectronics

Features Order code RDS(on) max. STW12N170K5 1700 V 2.9 Ω 5A - Industry’s lowest RDS(on) x area - Industry’s best Fo M (figure of merit) - Ultra-low gate charge - Zener-protected PTOT 250 W Applications - Switching applications Description This very high voltage N-channel Power MOSFET is designed using MDmesh K5 technology based on an innovative proprietary vertical structure. The result is a dramatic reduction in on-resistance and ultra-low gate charge for applications requiring superior power density and high efficiency. Product status link STW12N170K5 Product summary Order code STW12N170K5 Marking Package TO-247 Packing Tube DS12847 - Rev 2 - March 2022 For further information contact your local STMicroelectronics sales office. .st. Electrical ratings Table 1. Absolute maximum ratings Symbol Parameter Gate-source voltage Drain current at TC = 25 °C ID Drain current at TC = 100...