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STF12NK65Z
N-channel 650 V, 0.6 Ω typ., 10 A SuperMESH™ Power MOSFET in a TO-220FP package
Datasheet - production data
TO-220FP Figure 1: Internal schematic diagram
D(2)
G(1)
Features
Order code STF12NK65Z
VDS 650 V
RDS(on) max. 0.7 Ω
ID 10 A
PTOT 35 W
Extremely high dv/dt capability 100% avalanche tested Gate charge minimized Zener-protected
Applications
Switching applications
Description
This high voltage device is a Zener-protected N-channel Power MOSFET developed using the SuperMESH™ technology by STMicroelectronics, an optimization of the well-established PowerMESH™. In addition to a significant reduction in on-resistance, this device is designed to ensure a high level of dv/dt capability for the most demanding applications.