12N170K5 Datasheet | STMicroelectronics

STW12N170K5 N-channel 1700 V, 2.3 Ω typ., 5 A, MDmesh K5 Power MOSFET in a TO‑247 package 3 2 1 TO-247 D(2, TAB) G(1) S(3) AM01476v1_tab Features Order code RDS(on) max. STW12N170K5 1700 V 2.9 Ω 5A - Industry’s lowest RDS(on) x area - Industry’s best FoM (figure of merit) - Ultra-low gate charge - Zener-protected PTOT 250 W Applications - Switching applications Description This very high voltage N-channel Power MOSFET is designed using MDmesh K5 technology based on an innovative proprietary vertical structure. The result is a dramatic reduction in on-resistance and ultra-low gate charge for applications requiring superior power density and high...