12NM60N Description
This series of devices implements second generation MDmesh™ technology. This revolutionary Power MOSFET associates a new vertical structure to the pany’s strip layout to yield one of the world’s lowest on-resistance and gate charge. It is therefore suitable for the most demanding high efficiency converters.
12NM60N Key Features
- 100% avalanche tested
- Low input capacitance and gate charge
- Low gate input resistance
- Switching application
- STF12NM60N
- STP12NM60N
- STW12NM60N
- 3 Electrical characteristics
- 9 Package mechanical data
- 10 Packaging mechanical data