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13007N Datasheet ST13007N

Manufacturer: STMicroelectronics

General Description

The device is manufactured using high voltage Multi Epitaxial Planar technology for high switching speeds and high voltage capability.

They use a Cellular Emitter structure to enhance switching speeds.

1 2 3 1 2 3 TO-220 TO-220FP INTERNAL SCHEMATIC DIAGRAM ABSOLUTE MAXIMUM RATINGS Symbol V CEV V CEO V EBO IC I CM IB I BM P t ot T stg Tj Parameter ST13007N Collector-Emitter Voltage (VBE = -1.5V) Collector-Emitter Voltage (IB = 0) Emitter-Base Voltage (IC = 0) Collector Current Collector Peak Current Base Current Base Peak Current Total Dissipation at Tc ≤ 25 C Storage T emperature Max.

Overview

® ST13007N ST13007NFP HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTORS s s s s s HIGH VOLTAGE CAPABILITY NPN TRANSISTOR LOW SPREAD OF DYNAMIC PARAMETERS MINIMUM LOT-TO-LOT SPREAD FOR RELIABLE OPERATION VERY HIGH.