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18N60M2 - N-Channel Power MOSFET

General Description

technology.

Key Features

  • 3 12 TO-220FP ultra narrow leads D(2) Order code V DS RDS(on) max ID STFU18N60M2 600 V 0.280 Ω 13 A.
  • Extremely low gate charge.
  • Excellent output capacitance (COSS) profile.
  • 100% avalanche tested.
  • Zener-protected.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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STFU18N60M2 Datasheet N-channel 600 V, 0.255 Ω typ., 13 A MDmesh M2 Power MOSFET in a TO-220FP ultra narrow leads package Features 3 12 TO-220FP ultra narrow leads D(2) Order code V DS RDS(on) max ID STFU18N60M2 600 V 0.280 Ω 13 A • Extremely low gate charge • Excellent output capacitance (COSS) profile • 100% avalanche tested • Zener-protected Applications • Switching applications • LLC converters, resonant converters G(1) Description This device is an N-channel Power MOSFET developed using MDmesh M2 technology. Thanks to its strip layout and an improved vertical structure, the device S(3) AM15572v1_no_tab exhibits low on-resistance and optimized switching characteristics, rendering it suitable for the most demanding high efficiency converters.