Datasheet4U Logo Datasheet4U.com

18N60 - N-Channel Power MOSFET

Description

The UTC 18N60 uses UTC’s advanced proprietary, planar stripe, DMOS technology to provide excellent RDS(ON), low gate charge and operation with low gate voltages.

This device is suitable for use as a load switch or in PWM applications.

Features

  • RDS(ON) ≤ 0.5 Ω @ VGS=10V, ID=9.0A.
  • Fast Switching Capability.
  • Avalanche Energy Specified.
  • Improved dv/dt Capability, High Ruggedness.
  • SYMBOL 2.Drain 1 TO-247 11 TO-3P TO-3PN 1.Gate 3.Source.

📥 Download Datasheet

Datasheet preview – 18N60

Datasheet Details

Part number 18N60
Manufacturer Unisonic Technologies
File Size 359.74 KB
Description N-Channel Power MOSFET
Datasheet download datasheet 18N60 Datasheet
Additional preview pages of the 18N60 datasheet.

📁 Similar Datasheet

  • 18N60 - N-Channel MOSFET (Inchange Semiconductor)
  • 18N60-ML - N-CHANNEL POWER MOSFET (UTC)
  • 18N60M2 - N-Channel Power MOSFET (STMicroelectronics)
  • 18N65M5 - N-Channel Power MOSFET (STMicroelectronics)
  • 18N10 - N-Channel Mosfet Transistor (Inchange Semiconductor)
  • 18N10 - N-Channel Enhancement Mode Power MOSFET (GOFORD)
  • 18N120BN - HGTG18N120BN (Fairchild Semiconductor)
  • 18N20 - N-CHANNEL POWER MOSFET (UTC)
  • 18N20 - N-Channel Mosfet Transistor (Inchange Semiconductor)
  • 18N20GH - AP18N20GH (Advanced Power Electronics)
Other Datasheets by Unisonic Technologies
  • 18N65 - N-CHANNEL MOSFET
  • 18N25 - 18A 250V N-CHANNEL POWER MOSFET
  • 18N40 - N-CHANNEL POWER MOSFET
  • 18N50 - N-CHANNEL MOSFET
  • 18NM50-U2 - N-CHANNEL POWER MOSFET
  • 18NM65 - N-CHANNEL POWER MOSFET
  • 18NM70 - N-CHANNEL POWER MOSFET

Full PDF Text Transcription

Click to expand full text
UNISONIC TECHNOLOGIES CO., LTD 18N60 18A, 600V N-CHANNEL POWER MOSFET Power MOSFET  DESCRIPTION The UTC 18N60 uses UTC’s advanced proprietary, planar stripe, DMOS technology to provide excellent RDS(ON), low gate charge and operation with low gate voltages. This device is suitable for use as a load switch or in PWM applications.  FEATURES * RDS(ON) ≤ 0.5 Ω @ VGS=10V, ID=9.0A * Fast Switching Capability * Avalanche Energy Specified * Improved dv/dt Capability, High Ruggedness  SYMBOL 2.Drain 1 TO-247 11 TO-3P TO-3PN 1.Gate 3.
Published: |