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18N65 - N-CHANNEL MOSFET

Description

The UTC 18N65 uses UTC’s advanced proprietary, planar stripe, DMOS technology to provide excellent RDS(ON), low gate charge and operation with low gate voltages.

This device is suitable for use as a load switch or in PWM applications.

Features

  • RDS(ON) ≤ 0.5Ω @ VGS=10V, ID=9.0A.
  • Fast Switching Capability.
  • Avalanche Energy Specified.
  • Improved dv/dt Capability, High Ruggedness.
  • SYMBOL 2.Drain Power MOSFET 1.Gate 3.Source.

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Datasheet preview – 18N65

Datasheet Details

Part number 18N65
Manufacturer UNISONIC TECHNOLOGIES
File Size 403.61 KB
Description N-CHANNEL MOSFET
Datasheet download datasheet 18N65 Datasheet
Additional preview pages of the 18N65 datasheet.

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Full PDF Text Transcription

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UNISONIC TECHNOLOGIES CO., LTD 18N65 18A, 650V N-CHANNEL POWER MOSFET  DESCRIPTION The UTC 18N65 uses UTC’s advanced proprietary, planar stripe, DMOS technology to provide excellent RDS(ON), low gate charge and operation with low gate voltages. This device is suitable for use as a load switch or in PWM applications.  FEATURES * RDS(ON) ≤ 0.5Ω @ VGS=10V, ID=9.0A * Fast Switching Capability * Avalanche Energy Specified * Improved dv/dt Capability, High Ruggedness  SYMBOL 2.Drain Power MOSFET 1.Gate 3.
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