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19N60M6 - N-Channel Power MOSFET

General Description

The new MDmesh M6 technology incorporates the most recent advancements to the well-known and consolidated MDmesh family of SJ MOSFETs.

Key Features

  • Order code VDS RDS(on) max. ID STL19N60M6 600 V 308 mΩ 11 A.
  • Reduced switching losses.
  • Lower RDS(on) per area vs previous generation.
  • Low gate input resistance.
  • 100% avalanche tested.
  • Zener-protected.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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STL19N60M6 Datasheet N-channel 600 V, 255 mΩ typ., 11 A MDmesh M6 Power MOSFET in a PowerFLAT 8x8 HV package 5 432 1 PowerFLAT 8x8 HV Drain(5) Gate(1) Driver source (2) Power source (3, 4) NG1DS2PS34D5Z Features Order code VDS RDS(on) max. ID STL19N60M6 600 V 308 mΩ 11 A • Reduced switching losses • Lower RDS(on) per area vs previous generation • Low gate input resistance • 100% avalanche tested • Zener-protected Applications • Switching applications • LLC converters • Boost PFC converters Description The new MDmesh M6 technology incorporates the most recent advancements to the well-known and consolidated MDmesh family of SJ MOSFETs.