Click to expand full text
®
STB20NE06L
N - CHANNEL 60V - 0.06Ω - 20A TO-263 STripFET™ POWER MOSFET
TYPE STB20NE06L
s s s s s s
V DSS 60 V
R DS(on) < 0.07 Ω
ID 20 A
TYPICAL RDS(on) = 0.06 Ω EXCEPTIONAL dv/dt CAPABILITY 100% AVALANCHE TESTED LOW GATE CHARGE 100 oC LOW THRESHOLD DRIVE ADD SUFFIX ”T4” FOR ORDERING IN TAPE & REEL
3 1
DESCRIPTION This Power Mosfet is the latest development of STMicroelectronis unique ”Single Feature Size™” strip-based process. The resulting transistor shows extremely high packing density for low on-resistance, rugged avalance characteristics and less critical alignment steps therefore a remarkable manufacturing reproducibility.
20NE06L Datasheet
