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210N4LF7 - N-Channel Power MOSFET

General Description

This N-channel Power MOSFET utilizes STripFET F7 technology with an enhanced trench gate structure that results in very low on-state resistance, while also reducing internal capacitance and gate charge for faster and more efficient switching.

Key Features

  • Order code STL210N4LF7AG VDS 40 V RDS(on) max. 1.6 mΩ.
  • AEC-Q101 qualified.
  • Among the lowest RDS(on) on the market.
  • Excellent FoM (figure of merit).
  • Low Crss/Ciss ratio for EMI immunity.
  • High avalanche ruggedness.
  • Wettable flank package ID 120 A G(4).

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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STL210N4LF7AG Datasheet Automotive N-channel 40 V, 1.35 mΩ typ., 120 A, STripFET™ F7 Power MOSFET in a PowerFLAT™ 5x6 package 4 3 2 1 PowerFLAT™ 5x6 D(5, 6, 7, 8) 8 76 5 Features Order code STL210N4LF7AG VDS 40 V RDS(on) max. 1.6 mΩ • AEC-Q101 qualified • Among the lowest RDS(on) on the market • Excellent FoM (figure of merit) • Low Crss/Ciss ratio for EMI immunity • High avalanche ruggedness • Wettable flank package ID 120 A G(4) Applications • Switching applications S(1, 2, 3) 12 34 Top View AM15540v2 Description This N-channel Power MOSFET utilizes STripFET F7 technology with an enhanced trench gate structure that results in very low on-state resistance, while also reducing internal capacitance and gate charge for faster and more efficient switching.