26NM60N Datasheet - STMicroelectronics

STL26NM60N

26NM60N Features

* Order code STL26NM60N VDSS @ TJmax 650 V RDS(on) max < 0.185 Ω ID 19 A (1) ' $ 3 3 3 "OTTOMVIEW 1. The value is rated according to Rthj-case

* 100% avalanche tested Low input capacitance and gate charge Low gate input resistance 0OWER&,!4X(6 Applications

26NM60N General Description

This device is an N-channel MDmesh™ V Power MOSFET based on an innovative proprietary vertical process technology, which is combined with STMicroelectronics’ well-known PowerMESH™ horizontal layout structure. The resulting product has extremely low onresistance, which is unmatched among siliconbased.

26NM60N Datasheet (657.00 KB)