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26NM60N - STL26NM60N

General Description

This device is an N-channel MDmesh™ V Power MOSFET based on an innovative proprietary vertical process technology, which is combined with STMicroelectronics’ well-known PowerMESH™ horizontal layout structure.

Key Features

  • Order code STL26NM60N VDSS @ TJmax 650 V RDS(on) max < 0.185 Ω ID 19 A (1) ' $ 3 3 3 ".

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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STL26NM60N N-channel 600 V, 0.160 Ω , 19 A PowerFLAT™ 8x8 HV ultra low gate charge MDmesh™ II Power MOSFET Features Order code STL26NM60N VDSS @ TJmax 650 V RDS(on) max < 0.185 Ω ID 19 A (1) ' $ 3 3 3 "OTTOMVIEW 1. The value is rated according to Rthj-case ■ ■ ■ 100% avalanche tested Low input capacitance and gate charge Low gate input resistance 0OWER&,!4˜X(6 Applications ■ Switching applications Figure 1. Internal schematic diagram Description This device is an N-channel MDmesh™ V Power MOSFET based on an innovative proprietary vertical process technology, which is combined with STMicroelectronics’ well-known PowerMESH™ horizontal layout structure.