Datasheet4U Logo Datasheet4U.com

26N60M2 - N-Channel Power MOSFET

Datasheet Summary

Description

These devices are N-channel Power MOSFETs developed using MDmesh™ M2 technology.

Thanks to their strip layout and improved vertical structure, these devices exhibit low on-resistance and optimized switching characteristics, rendering them suitable for the most demanding high efficiency converters.

Features

  • Order code STP26N60M2 STW26N60M2 VDS @ TJmax 650 V RDS(on) max. 0.165 Ω ID 20 A PTOT 169 W.
  • Extremely low gate charge.
  • Excellent output capacitance (COSS) profile.
  • 100% avalanche tested.
  • Zener-protected.

📥 Download Datasheet

Datasheet preview – 26N60M2

Datasheet Details

Part number 26N60M2
Manufacturer STMicroelectronics
File Size 800.56 KB
Description N-Channel Power MOSFET
Datasheet download datasheet 26N60M2 Datasheet
Additional preview pages of the 26N60M2 datasheet.

📁 Similar Datasheet

  • 26N50 - 26A 500V N-CHANNEL POWER MOSFET (UNISONIC TECHNOLOGIES)
Other Datasheets by STMicroelectronics

Full PDF Text Transcription

Click to expand full text
STP26N60M2, STW26N60M2 N-channel 600 V, 0.14 Ω typ., 20 A MDmesh™ M2 Power MOSFETs in TO-220 and TO-247 packages Datasheet - production data TAB 3 2 1 TO-220 3 2 1 TO-247 Figure 1: Internal schematic diagram Features Order code STP26N60M2 STW26N60M2 VDS @ TJmax 650 V RDS(on) max. 0.165 Ω ID 20 A PTOT 169 W  Extremely low gate charge  Excellent output capacitance (COSS) profile  100% avalanche tested  Zener-protected Applications  Switching applications Description These devices are N-channel Power MOSFETs developed using MDmesh™ M2 technology. Thanks to their strip layout and improved vertical structure, these devices exhibit low on-resistance and optimized switching characteristics, rendering them suitable for the most demanding high efficiency converters.
Published: |