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26N60M2 - N-Channel Power MOSFET

General Description

These devices are N-channel Power MOSFETs developed using MDmesh™ M2 technology.

Thanks to their strip layout and improved vertical structure, these devices exhibit low on-resistance and optimized switching characteristics, rendering them suitable for the most demanding high efficiency converters.

Key Features

  • Order code STP26N60M2 STW26N60M2 VDS @ TJmax 650 V RDS(on) max. 0.165 Ω ID 20 A PTOT 169 W.
  • Extremely low gate charge.
  • Excellent output capacitance (COSS) profile.
  • 100% avalanche tested.
  • Zener-protected.

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📁 Similar Datasheet

Part Number Description Manufacturer
26N50 26A 500V N-CHANNEL POWER MOSFET UNISONIC TECHNOLOGIES

Other Datasheets by STMicroelectronics

Part Number Description
26NM60N STL26NM60N

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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STP26N60M2, STW26N60M2 N-channel 600 V, 0.14 Ω typ., 20 A MDmesh™ M2 Power MOSFETs in TO-220 and TO-247 packages Datasheet - production data TAB 3 2 1 TO-220 3 2 1 TO-247 Figure 1: Internal schematic diagram Features Order code STP26N60M2 STW26N60M2 VDS @ TJmax 650 V RDS(on) max. 0.165 Ω ID 20 A PTOT 169 W  Extremely low gate charge  Excellent output capacitance (COSS) profile  100% avalanche tested  Zener-protected Applications  Switching applications Description These devices are N-channel Power MOSFETs developed using MDmesh™ M2 technology. Thanks to their strip layout and improved vertical structure, these devices exhibit low on-resistance and optimized switching characteristics, rendering them suitable for the most demanding high efficiency converters.