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STL26NM60N
N-channel 600 V, 0.160 Ω , 19 A PowerFLAT™ 8x8 HV ultra low gate charge MDmesh™ II Power MOSFET
Features
Order code STL26NM60N VDSS @ TJmax 650 V RDS(on) max < 0.185 Ω ID 19 A (1)
' $ 3 3 3
"OTTOM VIEW
1. The value is rated according to Rthj-case ■ ■ ■
100% avalanche tested Low input capacitance and gate charge Low gate input resistance
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Applications
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Switching applications Figure 1. Internal schematic diagram
Description
This device is an N-channel MDmesh™ V Power MOSFET based on an innovative proprietary vertical process technology, which is combined with STMicroelectronics’ well-known PowerMESH™ horizontal layout structure.
26NM60N Datasheet
