28N65M2 Datasheet | STMicroelectronics

res Order codes STB28N65M2 STF28N65M2 STP28N65M2 STW28N65M2 VDS RDS(on) max 650 V 0.18 Ω ID 20 A - Extremely low gate charge - Excellent output capacitance (Coss) profile - 100% avalanche tested - Zener-protected Applications - Switching applications Description These devices are N-channel Power MOSFETs developed using MDmesh™ M2 technology. Thanks to their strip layout and improved vertical structure, the devices exhibit low on-resistance and optimized switching characteristics, rendering them suitable for the most demanding high efficiency converters. Order codes STB28N65M2 STF28N65M2 STP28N65M2 STW28N65M2 AM15572v1 Table 1. Device summary Marking Package D2PAK TO-220FP TO-220 TO-247 Packaging Tape and reel Tube December 2014 Doc ID027256 Rev 1 This is preliminary information on a new product now in development or undergoing evaluation. Details are subject to change without notice. 1/22 .st. Contents...