2N5551HR transistor equivalent, hi-rel npn bipolar transistor.
Vceo
IC(max.)
160 V
0.5 A
* Hermetic packages
* ESCC and JANS qualified
* Up to 100 krad(Si) low dose rate
HFE at 5 V, 10 mA > 80
Tj(max.) 200 °C
Desc.
and suitable for low current and high precision circuits such preamplifiers, oscillators, current mirror circuits.
In ca.
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