2N5551HR
Overview
This bipolar transistor is able to operate under severe environment conditions and radiation exposure providing high immunity to total ionizing dose (TID). All part numbers are guaranteed up to 100 krad with low dose rate at 0.1 rad/s as per ESCC 22900.
- Hermetic packages
- ESCC and JANS qualified
- Up to 100 krad(Si) low dose rate HFE at 5 V, 10 mA > 80 Tj(max.) 200 °C
