2N5551HR Datasheet, transistor, STMicroelectronics

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2N5551HR Features and benefits

Vceo IC(max.) 160 V 0.5 A
* Hermetic packages
* ESCC and JANS qualified
* Up to 100 krad(Si) low dose rate HFE at 5 V, 10 mA > 80 Tj(max.) 200 °C Desc.

2N5551HR Application

and suitable for low current and high precision circuits such preamplifiers, oscillators, current mirror circuits. In ca.

2N5551HR Description

This bipolar transistor is able to operate under severe environment conditions and radiation exposure providing high immunity to total ionizing dose (TID). All part numbers are guaranteed up to 100 krad with low dose rate at 0.1 rad/s as per ESCC 229.

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