2N5551HR Datasheet - STMicroelectronics

Hi-Rel NPN bipolar transistor

2N5551HR General Description

This bipolar transistor is able to operate under severe environment conditions and radiation exposure providing high immunity to total ionizing dose (TID). All part numbers are guaranteed up to 100 krad with low dose rate at 0.1 rad/s as per ESCC 22900. Qualified as per ESCC 5201/019 and MIL-PRF-195.

2N5551HR Datasheet (255.85 KB)

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2N5551HR

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STMicroelectronics ↗

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255.85 KB

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Hi-rel npn bipolar transistor.
2N5551HR Datasheet Rad-Hard 160 V, 0.5 A NPN bipolar transistor 3 1 2 LCC-3 3 4 1 2 UB Pin 4 in UB is connected to the metallic lid. C (3) (2) B .

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2N5551HR General Description

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