2N5551HR

The 2N5551HR is Hi-Rel NPN bipolar transistor designed by STMicroelectronics.

Product Overview

STMicroelectronics

Datasheet Details

Part number	2N5551HR
Manufacturer	STMicroelectronics
File Size	255.85 KB
Description	Hi-Rel NPN bipolar transistor
Datasheet	2N5551HR_STMicroelectronics.pdf
Additional preview pages of the 2N5551HR datasheet.

Product details

Description

This bipolar transistor is able to operate under severe environment conditions and radiation exposure providing high immunity to total ionizing dose (TID).

Features

Vceo IC(max. ) 160 V 0.5 A.
Hermetic packages.
ESCC and JANS qualified.
Up to 100 krad(Si) low dose rate HFE at 5 V, 10 mA > 80 Tj(max. ) 200 °C.

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Published: Feb 4, 2010 |