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2N6039 - Complementary power Darlington transistors

Description

oleThe devices are manufactured in planar stechnology with “base island” layout and bmonolithic Darlington configuration.

Figure 1.

Obsolete Product(s) - O R1 typ.

Features

  • .
  • Good hFE linearity.
  • High fT frequency ).
  • Monolithic Darlington configuration with t(sintegrated antiparallel collector-emitter diode duc.

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2N6036 2N6039 Complementary power Darlington transistors Features . ■ Good hFE linearity ■ High fT frequency )■ Monolithic Darlington configuration with t(sintegrated antiparallel collector-emitter diode ducApplications ro■ Linear and switching industrial equipment te PDescription oleThe devices are manufactured in planar stechnology with “base island” layout and bmonolithic Darlington configuration. 1 2 3 SOT-32 Figure 1. Internal schematic diagram Obsolete Product(s) - O R1 typ. = 15 kΩ R2 typ. = 100 Ω Table 1. Device summary Order codes Marking 2N6036 2N6036 2N6039 2N6039 Polarity NPN PNP Package SOT-32 SOT-32 Packaging Tube Tube May 2009 Doc ID 5064 Rev 5 1/10 www.st.com 10 Absolute maximum ratings 1 Absolute maximum ratings 2N6036, 2N6039 Table 2.
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