High power PNP epitaxial planar bipolar transistor
■ High breakdown voltage VCEO = 250 V
■ Complementary to 2ST5949
■ Fast switching speed
■ Typical ft = 25 MHz
■ Fully characterized at 125 oC
■ Audio power amplifier
The device is a PNP transistor manufactured
using new BiT-LA (Bipolar transistor for linear
amplifier) technology. The resulting transistor
shows good gain linearity behaviour.
Figure 1. Internal schematic diagram
Table 1. Device summary
This is preliminary information on a new product now in development or undergoing evaluation. Details are subject to
change without notice.