2ST5949 Description
le The device is a NPN transistor manufactured o using new BiT-LA (Bipolar transistor for linear s amplifier) technology. The resulting transistor b shows good gain linearity behaviour. Internal schematic diagram Obsolete Product(s) - O Table.
2ST5949 Key Features
- High breakdown voltage VCEO = 250 V
- plementary to 2ST2121
- Typical ft = 25 MHz
- Fully characterized at 125 oC uc Application rod
- Audio power amplifier te P Description le The device is a NPN transistor manufactured o using new BiT-LA (Bipolar transi
- O Table 1. Device summary