Datasheet Summary
High power NPN epitaxial planar bipolar transistor
Features
- High breakdown voltage VCEO = 250 V
- plementary to 2ST2121
- Typical ft = 25 MHz t(s)
- Fully characterized at 125 oC uc Application rod
- Audio power amplifier te P Description le The device is a NPN transistor manufactured o using new BiT-LA (Bipolar transistor for linear s amplifier) technology. The resulting transistor b shows good gain linearity behaviour.
1 2
TO-3
Figure 1. Internal schematic diagram
Obsolete Product(s)
- O Table 1. Device summary
Order code
Marking
Package
Packaging
TO-3 tray
November 2008
Rev...