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2ST5949 Datasheet NPN Transistor

Manufacturer: STMicroelectronics

Overview: 2ST5949 High power NPN epitaxial planar bipolar transistor.

General Description

le The device is a NPN transistor manufactured o using new BiT-LA (Bipolar transistor for linear s amplifier) technology.

The resulting transistor b shows good gain linearity behaviour.

1 2 TO-3 Figure 1.

Key Features

  • High breakdown voltage VCEO = 250 V.
  • Complementary to 2ST2121.
  • Typical ft = 25 MHz t(s).
  • Fully characterized at 125 oC uc.

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