Datasheet Summary
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High power PNP epitaxial planar bipolar transistor
Preliminary data
Features
- -
- -
- High breakdown voltage VCEO = 250 V plementary to 2ST5949 Fast switching speed Typical ft = 25 MHz Fully characterized at 125 oC
Applications
- 1 2
TO-3
Audio power amplifier
Description
The device is a PNP transistor manufactured using new BiT-LA (Bipolar transistor for linear amplifier) technology. The resulting transistor shows good gain linearity behaviour. Figure 1. Internal schematic diagram
Table 1.
Device summary
Marking 2ST2121 Package TO-3 Packaging tray
Order code 2ST2121
July 2008
Rev 4
1/8
.st. 8
This is preliminary information on a new...