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2STF2360 - Low voltage fast-switching PNP power transistors

General Description

The device is PNP transistor manufactured using new “PB-HDC” (power bipolar high density current) technology.

The resulting transistor shows exceptional high gain performances coupled with very low saturation voltage.

Key Features

  • Very low collector-emitter saturation voltage.
  • High current gain characteristic.
  • Fast-switching speed Table 1. Device summary Order code Marking Package 2STF2360 2360 SOT-89 Packaging Tape and reel December 2014 This is information on a product in full production. DocID13309 Rev 6 1/11 www. st. com Contents Contents 2STF2360 1 Absolute maximum ratings.
  • 3 2 Electrical characteristics.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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2STF2360 Low voltage fast-switching PNP power transistors 4 3 2 1 SOT-89 Figure 1. Internal schematic diagram Datasheet - production data Applications • Emergency lighting • LED • Voltage regulation • Relay drive Description The device is PNP transistor manufactured using new “PB-HDC” (power bipolar high density current) technology. The resulting transistor shows exceptional high gain performances coupled with very low saturation voltage. Features • Very low collector-emitter saturation voltage • High current gain characteristic • Fast-switching speed Table 1. Device summary Order code Marking Package 2STF2360 2360 SOT-89 Packaging Tape and reel December 2014 This is information on a product in full production. DocID13309 Rev 6 1/11 www.st.