Datasheet4U Logo Datasheet4U.com

30N80K5 - N-channel Power MOSFET

General Description

This very high voltage N-channel Power MOSFET is designed using MDmesh™ K5 technology based on an innovative proprietary vertical structure.

The result is a dramatic reduction in on-resistance and ultra-low gate charge for applications requiring superior power density and high efficiency.

Key Features

  • Order code STB30N80K5 VDS 800 V RDS(on) max. 0.18 Ω ID 24 A.
  • Industry’s lowest RDS(on) x area.
  • Industry’s best FoM (figure of merit).
  • Ultra-low gate charge.
  • 100% avalanche tested.
  • Zener-protected.

📥 Download Datasheet

📁 Similar Datasheet

Part Number Description Manufacturer
30N05 N-Channel MOSFET Inchange Semiconductor
30N06 N-Channel MOSFET Inchange Semiconductor
30N06 N-CHANNEL POWER MOSFET UTC
30N06 60V N-Channel Enhancement Mode Power MOSFET UMW
30N06-Q N-CHANNEL POWER MOSFET Unisonic Technologies

Other Datasheets by STMicroelectronics

Part Number Description
30N65DM6 N-channel Power MOSFET
30NF20 STB30NF20
30NF20L N-channel Power MOSFET

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
STB30N80K5 N-channel 800 V, 0.15 Ω typ., 24 A, MDmesh™ K5 Power MOSFET in a D²PAK package Datasheet - production data TAB 2 3 1 D²PAK Figure 1: Internal schematic diagram Features Order code STB30N80K5 VDS 800 V RDS(on) max. 0.18 Ω ID 24 A  Industry’s lowest RDS(on) x area  Industry’s best FoM (figure of merit)  Ultra-low gate charge  100% avalanche tested  Zener-protected Applications  Switching applications Description This very high voltage N-channel Power MOSFET is designed using MDmesh™ K5 technology based on an innovative proprietary vertical structure. The result is a dramatic reduction in on-resistance and ultra-low gate charge for applications requiring superior power density and high efficiency.