STB30N80K5
N-channel 800 V, 0.15 Ω typ., 24 A, MDmesh™ K5
Power MOSFET in a D²PAK package
Datasheet - production data
TAB
2
3
1
D²PAK
Figure 1: Internal schematic diagram
Features
Order code
STB30N80K5
VDS
800 V
RDS(on) max.
0.18 Ω
ID
24 A
Industry’s lowest RDS(on) x area
Industry’s best FoM (figure of merit)
Ultra-low gate charge
100% avalanche tested
Zener-protected
Applications
Switching applications
Description
This very high voltage N-channel Power
MOSFET is designed using MDmesh™ K5
technology based on an innovative proprietary
vertical structure. The result is a dramatic
reduction in on-resistance and ultra-low gate
charge for applications requiring superior power
density and high efficiency.
Order code
STB30N80K5
Table 1: Device summary
Marking
Package
30N80K5
D²PAK
Packaging
Tape and reel
July 2016
DocID028737 Rev 2
This is information on a product in full production.
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