Order code STB30N80K5 VDS 800 V RDS(on) max. 0.18 Ω ID 24 A
* Industry’s lowest RDS(on) x area
* Industry’s best FoM (figure of merit)
* Ultra-low gate ch.

* Switching applications Description This very high voltage N-channel Power MOSFET is designed using MDmesh™ K5 tech.

This very high voltage N-channel Power MOSFET is designed using MDmesh™ K5 technology based on an innovative proprietary vertical structure. The result is a dramatic reduction in on-resistance and ultra-low gate charge for applications requiring supe.

30N05

30N06

30N06-Q

30N06G

30N06L

30N06V-Q

30N10

30N12

30N15

30N20

30N20G

30N40

30N45