30N65DM6 Datasheet | STMicroelectronics

Features Order code STB30N65DM6AG VDS 650 V RDS(on) max. 115 mΩ ID 28 A - AEC-Q101 qualified - Fast-recovery body diode - Lower RDS(on) per area vs previous generation - Low gate charge, input capacitance and resistance - 100% avalanche tested - Extremely high dv/dt ruggedness - Zener-protected Applications - Switching applications Description This high-voltage N-channel Power MOSFET is part of the MDmesh DM6 fastrecovery diode series. pared with the previous MDmesh fast generation, DM6 bines very low recovery charge (Qrr), recovery time (trr) and excellent improvement in RDS(on) per area with one of the most effective switching behaviors available in the market for the most demanding high-efficiency bridge topologies and ZVS phase-shift converters. Product status link STB30N65DM6AG Product summary Order code STB30N65DM6AG Marking Package D²PAK Packing Tape and reel DS13770 - Rev 1 - June 2021 For further information contact your local STMicroelectronics sales office. .st. STB30N65DM6AG Electrical ratings Electrical ratings Table 1. Absolute maximum ratings Symbol Parameter Gate-source voltage Drain current (continuous) at TC = 25...