30N80K5 Datasheet | STMicroelectronics

Features Order code STB30N80K5 VDS 800 V RDS(on) max. 0.18 Ω ID 24 A - Industry’s lowest RDS(on) x area - Industry’s best Fo M (figure of merit) - Ultra-low gate charge - 100% avalanche tested - Zener-protected Applications - Switching applications Description This very high voltage N-channel Power MOSFET is designed using MDmesh™ K5 technology based on an innovative proprietary vertical structure. The result is a dramatic reduction in on-resistance and ultra-low gate charge for applications requiring superior power density and high efficiency. Order code STB30N80K5 Table 1: Device summary Marking Package D²PAK Packaging Tape and reel July 2016 Doc ID028737 Rev 2 This is information on a product in full production. 1/16 .st. Contents Contents STB30N80K5 1 Electrical ratings 3 2 Electrical characteristics 4 2.1 Electrical characteristics (curves) 6 3 Test circuits 9 4 Package information 10 4.1 D2PAK package information 10 4.2 D2PAK packaging information 13 5 Revision history 15 2/16 Doc ID028737 Rev 2 STB30N80K5 Electrical...