Type STB35N65M5 STF35N65M5 STI35N65M5 STP35N65M5 STW35N65M5 VDSS @ TJMAX 710 V 710 V 710 V 710 V 710 V RDS(on) max. ID < 0.098 Ω < 0.098 Ω < 0.098 Ω < 0.098 Ω < 0.098.

3 1 D²PAK 3 2 1 TO-220FP 123 I²PAK 3 2 1 TO-220 3 2 1 TO-247 Figure 1. Internal schematic diagram $
* Swit.

' These devices are N-channel MDmesh™ V Power MOSFETs based on an innovative proprietary vertical process technology, which is combined with STMicroelectronics’ well-known PowerMESH™ horizontal layout structure. The resulting product h.

35N65DM2

35N60C3

35N08

35N10

35N15E

35-91201

35-91401

35-JC6DT3

350-JC6DT3

350-XC6DT3

350-XS6DT3

35007B

3500FB39A0050