35N65DM2
Features
Order code
RDS(on) max.
STW35N65DM2
650 V
110 mΩ
32 A
3 2 1 TO-247
D(2, TAB)
- Fast-recovery body diode
- Extremely low gate charge and input capacitance
- Low on-resistance
- 100% avalanche tested
- Extremely high dv/dt ruggedness
- Zener-protected
Applications
- Switching applications
G(1)
Description
S(3)
NG1D2TS3Z
This high-voltage N-channel Power MOSFET is part of the MDmesh DM2 fastrecovery diode series. It offers very low recovery charge (Qrr) and time (trr) bined with low RDS(on), rendering it suitable for the most demanding high-efficiency converters and ideal for bridge topologies and ZVS phase-shift converters.
Product status link STW35N65DM2
Product summary
Order code
STW35N65DM2
Marking
Package
TO-247
Packing
Tube
DS12247
- Rev 3
- August 2020 For further information contact your local STMicroelectronics sales office.
.st.
Electrical ratings
Table 1. Absolute maximum...
