35N65M5
Features
Type
STB35N65M5 STF35N65M5 STI35N65M5 STP35N65M5 STW35N65M5
VDSS @ TJMAX
710 V 710 V 710 V 710 V 710 V
RDS(on) max. ID
< 0.098 Ω < 0.098 Ω < 0.098 Ω < 0.098 Ω < 0.098 Ω
27 A 27 A(1) 27 A 27 A 27 A
1. Limited only by maximum temperature allowed
- Worldwide best RDS(on)- area
- Higher VDSS rating
- Excellent switching performance
- Easy to drive
- 100% avalanche tested
- High dv/dt capability
Applications
3 1
D²PAK
3 2 1
TO-220FP
I²PAK
3 2 1
TO-220
3 2 1
TO-247
Figure 1. Internal schematic diagram
$
- Switching applications
Description
'
These devices are N-channel MDmesh™ V Power MOSFETs based on an innovative proprietary vertical process technology, which is bined with STMicroelectronics’ well-known Power MESH™ horizontal layout structure. The resulting product...
