36NM60N
Description
This device is an N-channel Power MOSFET developed using the second generation of MDmesh™ technology.
Key Features
- TAB 3 1 D2 PAK Order code STB36NM60N VDS @ TJmax 650 V RDS(on) max. ID PTOT 0.105 Ω 29 A 210 W
- Designed for automotive applications and AEC-Q101 qualified
- 100% avalanche tested
- Low input capacitance and gate charge
- Low gate input resistance Figure
- Internal ' 7$% * 6
