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48N60M2 - N-Channel MOSFET

General Description

This device is an N-channel Power MOSFET developed using MDmesh M2 technology.

Thanks to its strip layout and an improved vertical structure, the device exhibits low on-resistance and optimized switching characteristics, rendering it suitable for the most demanding high efficiency converters.

Key Features

  • Order code VDS @ TJmax. RDS(on)max. ID STW48N60M2-4 650 V 70 mΩ 42 A.
  • Excellent switching performance thanks to the extra driving source pin.
  • Extremely low gate charge.
  • Excellent output capacitance (Coss) profile.
  • 100% avalanche tested.
  • Zener-protected.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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STW48N60M2-4 Datasheet N-channel 600 V, 60 mΩ typ., 42 A MDmesh M2 Power MOSFET in a TO247‑4 package Gate(4) Driver source (3) 2 34 1 TO247-4 Drain(1, TAB) Features Order code VDS @ TJmax. RDS(on)max. ID STW48N60M2-4 650 V 70 mΩ 42 A • Excellent switching performance thanks to the extra driving source pin • Extremely low gate charge • Excellent output capacitance (Coss) profile • 100% avalanche tested • Zener-protected Applications • Switching applications Power source (2) AM10177v2Z Description This device is an N-channel Power MOSFET developed using MDmesh M2 technology.