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STMicroelectronics Electronic Components Datasheet

4NF06L Datasheet

N-CHANNEL MOSFET

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STN4NF06L
Datasheet
Automotive-grade N-channel 60 V, 0.07 Ω typ., 4 A STripFET II Power MOSFET
in a SOT-223 package
4
3
2
1
SOT-223
D(2, 4)
Features
Order code
VDS
RDS(on) max.
ID
STN4NF06L
60 V
< 0.1 Ω
4A
• AEC-Q101 qualified
• Exceptional dv/dt capability
• 100% avalanche tested
• Low gate charge
Applications
• Switching applications
G(1)
Description
This Power MOSFET has been developed using STMicroelectronics' unique
S(3)
STripFET process, which is specifically designed to minimize input capacitance and
Int_schem_nTnZ_SOT_223 gate charge. This renders the device suitable for use as primary switch in advanced
high-efficiency isolated DC-DC converters for telecom and computer applications,
and applications with low gate charge driving requirements.
Product status link
STN4NF06L
Product summary
Order code
STN4NF06L
Marking
4NF06L
Package
SOT-223
Packing
Tape and reel
DS5801 - Rev 3 - May 2020
For further information contact your local STMicroelectronics sales office.
www.st.com


STMicroelectronics Electronic Components Datasheet

4NF06L Datasheet

N-CHANNEL MOSFET

No Preview Available !

1
Electrical ratings
Table 1. Absolute maximum ratings
Symbol
Parameter
VDS
Drain-source voltage (VGS = 0 V)
VGS
Gate-source voltage
Drain current (continuous) at TC = 25 °C
ID(1)
Drain current (continuous) at TC = 100 °C
IDM(2)
Drain current (pulsed)
PTOT
Total power dissipation at TC = 25 °C
Derating Factor
dv/dt(3)
Peak diode recovery avalanche energy
EAS(4)
Single pulse avalanche energy
Tstg
Storage temperature range
TJ
Operating junction temperature range
1. Current limited by the package.
2. Pulse width limited by safe operating area.
3. ISD ≤ 3 A, di/dt ≤ 150 A/μs, VDD = V(BR)DSS, TJ ≤ TJ max.
4. Starting TJ = 25 °C, ID = 4 A, VDD = 30 V.
Table 2. Thermal data
Symbol
Parameter
Rthj-pcb (1)
Rthj-pcb(2)
Thermal resistance junction-pcb
TJ(3)
Maximum lead temperature for soldering purpose
1. When Mounted on FR-4 board with 1 inch2 pad, 2 oz. of Cu. and t <10 s.
2. When mounted on minimum recommended footprint.
3. For 10 s 1.6 mm from case.
STN4NF06L
Electrical ratings
Value
60
±16
4
2.9
16
3.3
0.026
10
200
-55 to 150
Unit
V
V
A
A
A
W
W/°C
V/ns
mJ
°C
Value
38
100
260
Unit
°C/W
°C/W
°C
DS5801 - Rev 3
page 2/14


Part Number 4NF06L
Description N-CHANNEL MOSFET
Maker STMicroelectronics
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4NF06L Datasheet PDF






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