4NF06L
Description
This Power MOSFET has been developed using STMicroelectronics' unique S(3) STripFET process, which is specifically designed to minimize input capacitance and Int_schem_nTnZ_SOT_223 gate charge.
Key Features
- AEC-Q101 qualified
- Exceptional dv/dt capability
- 100% avalanche tested
- Low gate charge
Applications
- Switching applications
