50DN6F7
50DN6F7 is N-channel Power MOSFET manufactured by STMicroelectronics.
Features
Order code STL50DN6F7
VDS 60 V
RDS(on) max. 11 mΩ
ID 57 A
- Among the lowest RDS(on) on the market
- Excellent figure of merit (Fo M)
- Low Crss/Ciss ratio for EMI immunity
- High avalanche ruggedness
Applications
- Switching applications
Description
This dual N-channel Power MOSFET utilizes STrip FET™ F7 technology with an enhanced trench gate structure that results in very low onstate resistance, while also reducing internal capacitance and gate charge for faster and more efficient switching.
Order code STL50DN6F7
Marking 50DN6F7
Table 1: Device summary Package
Power FLAT™ 5x6 double island
Packaging Tape and reel
November 2015
Doc ID028132 Rev 2
This is information on a product in full production.
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Contents
Contents
STL50DN6F7
1 Electrical...
