50DN6F7 Overview
This dual N-channel Power MOSFET utilizes STripFET™ F7 technology with an enhanced trench gate structure that results in very low onstate resistance, while also reducing internal capacitance and gate charge for faster and more efficient switching. Order code STL50DN6F7 Marking 50DN6F7 Table 1: Device summary Package PowerFLAT™ 5x6 double island Packaging Tape and reel November 2015 DocID028132 Rev 2 This is...
50DN6F7 Key Features
- Among the lowest RDS(on) on the market
- Excellent figure of merit (FoM)
- Low Crss/Ciss ratio for EMI immunity
- High avalanche ruggedness