50N105DK5 Datasheet | STMicroelectronics

Features Order code RDS(on) max. STY50N105DK5 1050 V 120 mΩ 46 A - Fast-recovery body diode - Best RDS(on) x area - Low gate charge, input capacitance and resistance - 100% avalanche tested - Extremely high dv/dt ruggedness PTOT 625 W D(2, TAB) Applications - Switching applications G(1) S(3) Description This very high voltage N-channel Power MOSFET is part of the MDmesh DK5 fastrecovery diode series. The MDmesh DK5 bines very low recovery charge (Qrr) and recovery time (trr) with an excellent improvement in RDS(on) - area and one of the most effective switching behaviors, ideal for half bridge and full bridge converters. AM01475v1_no Zen Product status link STY50N105DK5 Product summary Order code STY50N105DK5 Marking Package Max247 Packing Tube DS9462 - Rev 3 - August 2021 For further information contact your local STMicroelectronics sales office. .st. STY50N105DK5 Electrical ratings Electrical...