50N65DM6 Datasheet | STMicroelectronics

STP50N65DM6 N-channel 650 V, 74 mΩ typ., 33 A, MDmesh DM6 Power MOSFET in a TO-220 package TO-220 1 23 D(2, TAB) G(1) S(3) AM01476v1_tab Features Order code RDS(on) max. STP50N65DM6 650 V 91 mΩ 33 A - Fast-recovery body diode - Lower RDS(on) per area vs previous generation - Low gate charge, input capacitance and resistance - 100% avalanche tested - Extremely high dv/dt ruggedness - Zener-protected Applications - Switching applications Description This high-voltage N-channel Power MOSFET is part of the MDmesh DM6 fastrecovery diode series. pared with the previous MDmesh fast generation, DM6 bines very low recovery charge (Qrr), recovery time...