Datasheet4U Logo Datasheet4U.com

50N65DM6 - N-Channel MOSFET

General Description

This high-voltage N-channel Power MOSFET is part of the MDmesh DM6 fastrecovery diode series.

Key Features

  • Order code VDS RDS(on) max. ID STP50N65DM6 650 V 91 mΩ 33 A.
  • Fast-recovery body diode.
  • Lower RDS(on) per area vs previous generation.
  • Low gate charge, input capacitance and resistance.
  • 100% avalanche tested.
  • Extremely high dv/dt ruggedness.
  • Zener-protected.

📥 Download Datasheet

📁 Similar Datasheet

Part Number Description Manufacturer
50N60 IXRH50N60 IXYS
50N60A IGBT IXYS
50N60AS IGBT IXYS
50N60T IKW50N60T Infineon
50N02-09 SUB50N02-09 Vishay Siliconix

Other Datasheets by STMicroelectronics

Part Number Description
50N65DM2 N-Channel MOSFET
50N105DK5 N-channel Power MOSFET
50NF25 N-Channel Power MOSFET

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
STP50N65DM6 Datasheet N-channel 650 V, 74 mΩ typ., 33 A, MDmesh DM6 Power MOSFET in a TO-220 package TAB TO-220 1 23 D(2, TAB) G(1) S(3) AM01476v1_tab Features Order code VDS RDS(on) max. ID STP50N65DM6 650 V 91 mΩ 33 A • Fast-recovery body diode • Lower RDS(on) per area vs previous generation • Low gate charge, input capacitance and resistance • 100% avalanche tested • Extremely high dv/dt ruggedness • Zener-protected Applications • Switching applications Description This high-voltage N-channel Power MOSFET is part of the MDmesh DM6 fastrecovery diode series.