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55NF03L - N-channel Power MOSFET

General Description

This Power MOSFET is the latest development of STMicroelectronics unique “single feature size” strip-based process.

Key Features

  • Type STI55NF03L VDSS 30 V RDS(on) max < 0.013 Ω ID 55 A.
  • Optimized for high switching operation.
  • Low gate charge.
  • Logic level gate drive.

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STI55NF03L N-channel 30 V, 0.01 Ω, 55 A, I²PAK STripFET™ II Power MOSFET Features Type STI55NF03L VDSS 30 V RDS(on) max < 0.013 Ω ID 55 A ■ Optimized for high switching operation ■ Low gate charge ■ Logic level gate drive Application ■ Switching applications – Automotive Description This Power MOSFET is the latest development of STMicroelectronics unique “single feature size” strip-based process. The resulting transistor shows extremely high packing density for low onresistance, rugged avalanche characteristics and less critical alignment steps allowing remarkable manufacturing reproducibility. 123 I²PAK Figure 1. Internal schematic diagram $4!"OR ' Table 1.