55NM60ND
55NM60ND is STW55NM60ND manufactured by STMicroelectronics.
Features
Type STW55NM60ND
VDSS (@TJmax)
650 V
RDS(on) max
< 0.060 Ω
ID 51 A
- The worldwide best RDS(on) amongst the fast recovery diode devices in TO-247
- 100% avalanche tested
- Low input capacitance and gate charge
- Low gate input resistance
- High dv/dt and avalanche capabilities
Application
- Switching applications
Description
This FDmesh™ II Power MOSFET with intrinsic fast-recovery body diode is produced using the second generation of MDmesh™ technology. Utilizing a new strip-layout vertical structure, this revolutionary device features extremely low onresistance and superior switching performance. It is ideal for bridge topologies and ZVS phase-shift converters.
3 2 1 TO-247
Figure 1. Internal schematic diagram
Table 1. Device summary Order code
Marking
STW55NM60ND
Package TO-247
Packaging Tube
December 2012
This is information on a product in full production.
Doc ID 14169 Rev 3
1/12
.st.
Contents
Contents
STW55NM60ND
1 Electrical ratings
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- - . . . . 3 2 Electrical characteristics
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