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57N65M5 - N-Channel MOSFET

Description

These devices are N-channel MDmesh™ V Power MOSFETs based on an innovative proprietary vertical process technology, which is combined with STMicroelectronics’ well-known PowerMESH™ horizontal layout structure.

Features

  • 3 2 1 TO-247 TO-247 long leads Order codes VDS @ TJmax RDS(on) max ID STW57N65M5 STWA57N65M5 710 V 0.063 Ω 42 A.
  • Worldwide best RDS(on).
  • area amongst the silicon based devices.
  • Higher VDSS rating, high dv/dt capability.
  • Excellent switching performance.
  • Easy to drive, 100% avalanche tested Figure 1. Internal schematic diagram '  .

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The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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STW57N65M5, STWA57N65M5 N-channel 650 V, 0.056 Ω typ., 42 A MDmesh™ V Power MOSFETs in TO-247 and TO-247 long leads packages Datasheet - production data Features 3 2 1 TO-247 TO-247 long leads Order codes VDS @ TJmax RDS(on) max ID STW57N65M5 STWA57N65M5 710 V 0.063 Ω 42 A • Worldwide best RDS(on)*area amongst the silicon based devices • Higher VDSS rating, high dv/dt capability • Excellent switching performance • Easy to drive, 100% avalanche tested Figure 1. Internal schematic diagram '  Applications • Switching applications Description *  6  $0Y These devices are N-channel MDmesh™ V Power MOSFETs based on an innovative proprietary vertical process technology, which is combined with STMicroelectronics’ well-known PowerMESH™ horizontal layout structure.
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