62NM60N
Overview
This device is an N-channel Power MOSFET developed using the second generation of MDmesh™ technology. This revolutionary Power MOSFET associates a vertical structure to the company’s strip layout to yield one of the world’s lowest on-resistance and gate charge.
- 049 Ω ID 65 A
- 100% avalanche tested
- Low input capacitance and gate charge
- Low gate input resistance
